Metal/ZnOx/metal current limiter

ABSTRACT

A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method comprises: providing a substrate; forming an MSM bottom electrode overlying the substrate; forming a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and, forming an MSM top electrode overlying the semiconductor layer. The ZnOx semiconductor can be formed through a number of different processes such as spin-coating, direct current (DC) sputtering, radio frequency (RF) sputtering, metalorganic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

RELATED APPLICATIONS

This application is a Continuation-in-Part of a pending patentapplication entitled, MSM BINARY SWITCH MEMORY DEVICE, invented by ShengTeng Hsu et al., Ser. No. 11/184,660, filed Jul. 18, 2005, which isincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention generally relates to an integrated circuit (IC)fabrication process and, more particularly, to a metal/ZnOx/metalcurrent limiter device and associated fabrication processes.

2. Description of the Related Art

A cross-point memory array is a matrix of memory elements, withelectrical contacts arranged along x-axes (i.e., word lines) and alongy-axes (i.e., bit lines). In some aspects, a digital value is stored asa memory resistance (high or low). The memory state of a memory cell canbe read by supplying a voltage to the word line connected to theselected memory element. The resistance or memory state can be read asan output voltage of the bit line connected to the selected memory cell.

Cross-point resistor memory arrays are prone to read disturbanceproblems. As part of the read operation, electric current flows from aselected word line, through a selected memory cell, to a bit line.However, current also flows into unselected word lines that happen tocross over the selected bit line. The conduction of current intounselected word lines acts to decrease the output impedance and, hence,reduce the output voltage. To clearly distinguish memory states, theoutput voltage must be clearly distinguishable.

The undesired flow of current through a resistance memory cell can beaddressed through the use of series-connected diodes, since reversebiased diodes are poor conductors. However, this same feature makes aone-diode/one resistor (1D1R) memory difficult to program. Programmingvoltages cannot be used that reverse bias the diode. Therefore, 1D1Rcells are better for suited for unipolar programming. Further, diodesare preferable formed from single crystal silicon, for optimalperformance. However, large crystal grains are difficult to form usingthin-film deposition processes.

Many cross-point resistor memory array structures have been proposed inattempts to minimize cross-talk problems during read operations in alarge area cross-point resistor memory array. IRID memory cell are wellsuited for a mono-polarity programming memory array. However, gooddiodes can only be fabricated on single crystal silicon. For multi-layerthree-dimensional arrays, the upper layer of a diode is formed byre-crystallization of deposited silicon, and the resulting diode usuallyexhibits poor electrical properties. In addition, the diode must beformed from a silicon film that is fairly thick.

Rinerson et al., U.S. Pat. No. 6,753,561, have proposed a memory cell ofa metal/insulator/metal (MIM) structure in series with a resistormemory. The MIM device is non-conductive at low biases. When the biasvoltage is higher than a certain value, the conductivity drasticallyincreases. This voltage is called either the “current rise-up voltage”or “varistor voltage”. The high field generated in response to the MIMhigh current region is associated with impact ionization. As a result,the current voltage characteristics are reversible only at relativelylow current conditions. The MIM device is unable to handle a largecurrent density. In addition, Rinerson does not teach specific MIMmaterials, or how a MIM device is fabricated.

SUMMARY OF THE INVENTION

Described herein is a current limiting device that permits current flowin both forward and reverse directions under higher voltage (forward andreverse) bias conditions, but blocks current in under lower voltage biasconditions. The current limiter can be added to a resistance memorycell, to permit high voltage bipolar programming, without the penalty offlowing current into unselected word lines during lower voltage readoperations.

Many conventional cross-point resistor memory arrays suffer from readdisturbance problems, as electric current flows from a selected wordline, through a selected memory cell to a bit line, and then intounselected word lines which cross over the bit line. A cross-point arraymade with a current limiter in the memory cells minimizes the currentflow into the unselected word lines, maximizing the output (read)voltage.

More specifically, a metal/semiconductor/metal (MSM) current limiter isinserted into each resistor memory cell, where the semiconductor isZnOx. The current limiter is highly conductive when it is biased with alarge bias voltage, and is poor conductive when it is biased with asmall voltage. The high resistance under a low voltage reverse biasconditions minimizes the selected bit line current flows into theunselected word lines, which preserves the bit output signal quality.

Accordingly, a method is provided for forming a MSM current limiter. Themethod comprises: providing a substrate; forming an MSM bottom electrodeoverlying the substrate; forming a ZnOx semiconductor layer overlyingthe MSM bottom electrode, where x is in the range between about 1 andabout 2, inclusive; and, forming an MSM top electrode overlying thesemiconductor layer. The ZnOx semiconductor can be formed through anumber of different processes such as spin-coating, direct current (DC)sputtering, radio frequency (RF) sputtering, metalorganic chemical vapordeposition (MOCVD), or atomic layer deposition (ALD).

For example, if the ZnOx is formed using the spin-coating method, then aZnOx precursor is prepared as follows: preparing a solution of2-methyloxyethanol and ethanolamine; dissolving zinc acetate dehydratein the solution; refluxing the solution at a temperature in the range ofabout 110 to 150° C., for a time duration in the range of about 20 to 60minutes; and, filtering the solution to remove particles larger thanabout 0.2 micrometers.

The ZnOx is deposited at a spin-rate in the range of about 1000 to 4000revolutions per minute (RPM), baked, and then annealed in an atmospheresuch as dry air, an insert gas (e.g., N₂ or Ar) with an oxygen partialpressure, or pure oxygen. The process may be reiterated to form a numberof ZnOx layers in the range between about 2 and 20, inclusive.Additional details of the spin-coating process, and the other ZnOxdeposition processes are presented below.

A method for forming a resistance memory device withmetal/semiconductor/metal (MSM) current limiter is also provided. Themethod comprises: forming a memory resistor bottom electrode; forming amemory resistor material overlying the memory resistor bottom electrode;forming a memory resistor top electrode overlying the memory resistormaterial; and, forming an MSM current limiter, as described above,overlying the memory resistor top electrode.

Additional details of the above-described current limiter and resistancememory current limiter device are provided below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partial cross-sectional view of a metal/semiconductor/metal(MSM) current limiter.

FIG. 2 is a partial cross-sectional view of a resistance memory devicewith a MSM current limiter.

FIG. 3 is a diagram depicting a ZnOx spin-on precursor synthesis route.

FIG. 4 shows the IV curves of MSM current limiter devices with a ZnOxthickness of about 6.9 nm.

FIGS. 5A-5D and 6A-6D depict the IV curves of MSM current limiters witha thicker ZnOx thin film than the device of FIG. 4.

FIGS. 7A-7D depict the IV curves of MSM current limiter devices withvarious ZnOx thicknesses, from about 42.7 nm to 110 nm, with a devicesize of about 50 μm×50 μm.

FIGS. 8A and 8B show the IV curves of MSM devices with a ZnOx thicknessof about 1.1 μm and a device size of about 50 μm×50 μm.

FIG. 9 is a flowchart illustrating a method for forming a MSM currentlimiter.

FIG. 10 is flowchart illustrating a method for forming a resistancememory device with an MSM current limiter.

FIG. 11 is a flowchart illustrating a method for operating a MSM currentlimiter.

DETAILED DESCRIPTION

FIG. 1 is a partial cross-sectional view of a metal/semiconductor/metal(MSM) current limiter. The MSM current limiter 100 comprises a substrate102 and an MSM bottom electrode (BM) 104 overlying the substrate 102.The substrate 102 is not limited to any particular material, and may bea material such as Si, Ge, GeAs, glass, quartz, or plastic. A ZnOxsemiconductor layer 106 overlies the MSM bottom electrode 104, where xis in the range between about 1 and about 2, inclusive. That is, thesemiconductor layer may be ZnO, ZnO₂, or a material where the value of xis somewhere between about 1 and about 2, inclusive. An MSM topelectrode (TE) 108 overlies the semiconductor layer 106.

The value of x in the term ZnOx is associated with threshold andbreakdown voltages, and subthreshold swing and current density. Ingeneral, with increasing values of x, the threshold voltage, breakdownvoltage, and subthreshold swing increase, but the current densitydecreases. On the other hand, the ZnOx film thickness also has an effecton the threshold and breakdown voltages, as well as the subthresholdswing and current density. Therefore, the optimum properties ofparticular MSM devices can be obtaining by adjusting the value of x incombination with the film thickness. For this reason, it is difficult tospecify a particular value of x for all circumstances.

The MSM top electrode 108 and bottom electrode 104 may be a materialsuch as Pt, Ir, Au, Ag, TiN, Ti, Al, ALCu, Pd, Rh, W, Cr, or conductiveoxides. Note, the top electrode 108 and the bottom electrode 104 neednot necessarily be the same material. Typically, the MSM top and bottomelectrodes 108/104 each have a thickness 110 and 112, respectively, inthe range of about 30 to 200 nanometers (nm). Note, the top electrode108 and the bottom electrode 104 thicknesses 110/112 need notnecessarily be the same.

In some aspects, the ZnOx semiconductor layer 106 has a C-axisorientation. In other aspects, the ZnOx semiconductor layer 106 has athickness 114 in the range of about 10 to 1000 nanometers.

FIG. 2 is a partial cross-sectional view of a resistance memory devicewith a MSM current limiter. The device 200 comprises a memory resistor(MR) bottom electrode (bit line) 202, a memory resistor material 204overlying the memory resistor bottom electrode 202, and a memoryresistor top electrode 206 overlying the memory resistor material 204.An MSM current limiter 100 overlies the memory resistor top electrode206. As noted above, the MSM current limiter comprises a MSM bottomelectrode 104 and a ZnOx semiconductor layer 106 overlying the MSMbottom electrode 104, where x is in the range between about 1 and about2, inclusive. An MSM top electrode (word line) 108 overlies thesemiconductor layer 106. In other aspects not shown, the MSM currentlimiter is formed “under” the MR cell, as opposed to “over” the memorycell as shown. That is, the MSM bottom electrode 104 can be a bit line,with the memory resistor bottom electrode 202 formed overlying the MSMtop electrode 108. Then, the MR top electrode 206 would be a word line.

The memory resistor material 204 may be a material such asPr_(0.3)Ca_(0.7)MnO₃ (PCMO), colossal magnetoresistive (CMR) film,transition metal oxides, Mott insulators, high-temperature superconductor (HTSC), or perovskite materials. Materials such as Ag, Au, Pt,Ir, or TiN may be used as for the top electrode 206 and bottom electrode202. Details of the current limiter 100 are provided in the explanationof FIG. 1, and are not repeated here in the interest of brevity. In amemory array, a plurality of devices 200 would be attached to each bitline and word line, as is well understood in the art.

Functional Description

FIG. 3 is a diagram depicting a ZnOx spin-on precursor synthesis route.A P-type Si (100) wafer substrate may be used. After SC1 and SC2cleaning, and HF 20:1 dip etching, layers of about 100 nm of Pt andabout 180 nm of TiN are deposited on the Si wafers. The bottom and topelectrodes can be any metal such as Pt, Ir, Al, AlCu, Au, Ag, Pd, Rh, W,Ti, or Cr. The bottom and top electrodes can also be conductive oxidessuch as YBCO, ITO, InO3, ZnO, RuO₂, and La_(1-x)Sr_(x)CoO₃, or the like.A TiN/ZnO/TiN current limiter provides excellent results.

Zinc acetate dehydrate is used as the starting chemical, which isdissolved in the combined solution of 2-methoxyethanol and ethanolamine.The ethanolamine is added to promote a strong C-orientation growth ofZnOx thin films. The solution may be refluxed for about 30 minutes atabout 130° C. and filtered through about a 0.2 micrometer (μm) filter.ZnOx thin films may be spin-coated at a spin-rate ranging from about1000 to 4000 rpm, and then baked at hot plate temperatures of about100°, about 200°, and about 300° C., respectively, for about one minute(each). Each layer may be finally RTA annealed at about 450° C. forabout five minutes in oxygen ambient.

Alternately, the ZnOx may be deposited by sputtering. Some DC-sputteringZnOx deposition conditions and annealing schemes are listed in theTables 1 and 2. Using a Zn target, with or without oxygen, Zn or ZnOfilms are deposited. Then, the Zn or ZnO thin films may be annealed atabout 450° C. in dry air for about 30 minutes. Finally, about 180 nm ofTiN may be deposited on the ZnOx and patterned for current vs. voltage(IV) measurements. TABLE 1 The DC sputtering process conditions of ZnOxthin films Power Dep. Dep. Target (W) Temp. Dep. Pres. Atmosphere TimeZn 100-300 20-300° C. 2-10 mTorr Ar or N with 1-60 m 0-30% O₂

TABLE 2 Annealing scheme for ZnOx samples Anneal Temp. Time atmosphere400-500° C. 5-60 min Dry air or oxygenExperimental Results

FIG. 4 shows the IV curves of MSM current limiter devices with a ZnOxthickness of about 6.9 nm. The ZnO thickness of about 6.9 nm essentiallyforms a short between the electrodes. The shorting occurs becauseelectrons find it easy to tunnel through thinner ZnOx thin films.

FIGS. 6A-5D and 6A-6D depict the IV curves of MSM current limiters witha thicker ZnOx thin film than the device of FIG. 4. More interestingresults are obtained from MSM devices with a ZnOx thickness of about15.7 and 18.7 nm. FIG. 5A and 5B show the IV curves of an MSM devicewith a ZnOx thickness of about 15.7 nm and a device size of about 50μm×50 μm. The threshold voltage is about 0.3V and breakdown voltage isabout 2V. FIGS. 5C and 5D show the IV curves of an MSM device with ZnOxthickness of about 15.7 nm and a device size of about 100 μm×100 μm. Forthe MSM device of FIGS. 5C and 5D, the threshold voltage is about 0.2Vand breakdown voltage is also about 2V. Of particular interest, thedevice shows non-linear IV characteristics at lower operation (bias)voltages.

As seen in these figures, devices with a ZnOx thickness of about 18.7 nmexhibit a behavior similar to the MSM devices with a ZnO thickness ofabout 15.7 nm. For both 50 μm×50 μm and 100 μm×100 μm devices, thethreshold voltage is about 0.4V and breakdown voltage is about 2V. Theon/off current ratio of the smaller devices (50 μm×50 μm) is better thanthe larger device (100 μm×100 μm).

FIGS. 7A-7D depict the IV curves of MSM current limiter devices withvarious ZnOx thicknesses, from about 42.7 nm to 110 nm, with a devicesize of about 50 μm×50 μm. Further increases in the ZnOx thickness, overabout 18.7 nm up to 110 nm, result in an increase in threshold voltage,while the breakdown voltages remain about 2 to 2.5 V. The currents alsodecrease with an increasing ZnOx thickness, which means that theresistance of the MSM devices increases. Some devices only exhibitnon-linear IV characteristics after higher voltage training, whichswitches devices at a high voltage, then back to lower operation voltageto measure the IV curves.

FIGS. 8A and 8B show the IV curves of MSM devices with a ZnOx thicknessof about 1.1 μm and a device size of about 50 μm×50 μm. With a thickerZnOx film, the threshold voltage increases to about 16 volts and thebreakdown voltage also increases. The current also decreases, whichmeans that the resistance of the MSM device increases significantly. Inorder to measure the stability of the ZnOx MSM devices, the ZnO MSMdevices are annealed at about 400° C., successively in forming gas andoxygen for about 30 minutes. After forming gas annealing, the resistanceof the MSM device decreases, and some thinner ZnOx MSM devices exhibitshorting. After oxygen annealing, the IV curves of the ZnOx MSM showalmost no change.

FIG. 9 is a flowchart illustrating a method for forming a MSM currentlimiter. Although the method is depicted as a sequence of numbered stepsfor clarity, the numbering does not necessarily dictate the order of thesteps. It should be understood that some of these steps may be skipped,performed in parallel, or performed without the requirement ofmaintaining a strict order of sequence. The method starts at Step 900.

Step 902 provides a substrate. Step 904 forms an MSM bottom electrodeoverlying the substrate. Step 906 forms a ZnOx semiconductor layeroverlying the MSM bottom electrode, where x is in the range betweenabout 1 and about 2, inclusive. Step 906 can be performed using any ofthe following deposition methods: spin-coating, direct current (DC)sputtering, radio frequency (RF) sputtering, metalorganic chemical vapordeposition (MOCVD), or atomic layer deposition (ALD). The ZnOx layer mayhave a thickness in the range of about 10 to 1000 nanometers. Step 908forms an MSM top electrode overlying the semiconductor layer. Formingthe MSM top and bottom electrodes (Steps 908 and 904) may includeforming electrodes having a thickness in the range of about 30 to 200nanometers (nm).

In one aspect, Step 906 prepares a ZnOx precursor prior to spin-coatingthe ZnOx, as follows: preparing a solution of 2-methyloxyethanol andethanolamine; dissolving zinc acetate dehydrate in the solution, forexample, forming about a 1:1 molar ratio of zinc to ethanolamine in theprecursor; refluxing the solution at a temperature in the range of about110 to 150° C., for a time duration in the range of about 20 to 60minutes; and, filtering the solution to remove particles larger thanabout 0.2 micrometers.

In another aspect, Step 906 forms a ZnOx layer having a C-axisorientation. For example, in response to the spin-coat deposition, theZnOx layer is formed with the C-axis orientation in response to theethanolamine in the precursor.

In another aspect, spin-coating ZnOx overlying the MSM bottom electrodein Step 906 includes substeps. Step 906 a spin-coats a ZnOx film at aspin-rate in the range of about 1000 to 4000 revolutions per minute(RPM). Step 906 b bakes the ZnOx film. Step 906 c anneals the ZnOx filmin an atmosphere such as dry air, an insert gas such as N₂ or Ar with anoxygen partial pressure, or pure oxygen. Step 906 d reiterates theprocess (Steps 906 a through 906 c) to form between about 2 and 20 ZnOxlayers, inclusive.

More specifically, baking the ZnOx film in Step 906 b includes: bakingat about 100° C. for about one minute; then, baking at about 200° C. forabout one minute; and then, baking at about 300° C. for about oneminute. Annealing the ZnOx film in the oxygen ambient atmosphere (Step906 c) includes annealing at a temperature in the range of about 300 to500° C., for time duration in the range of about 1 to 30 minutes.

If ZnOx is deposited (Step 906) using the DC sputtering process, thenthe target may be either Zn or ZnO. The DC sputtering is carried out inan atmosphere either with, or without, oxygen. Generally, the DCsputtering includes: using a sputtering power in the range of about 100to 300 watts; depositing for a time duration in the range of about 1 to60 minutes; using a deposition temperature in the range of about 20 to300° C.; sputtering in an atmosphere including an inert gas and about 0to 30% oxygen; and, using a deposition pressure in the range of about 2to 10 milliTorr.

In one aspect, depositing ZnOx using the DC sputtering process includessubsteps. Step 906 e forms a Zn film. Step 906 f anneals in anatmosphere such as dry air, an inert gas such as N₂ or Ar with an oxygenpartial pressure, or pure oxygen. Step 906 g, in response to theannealing, forms a ZnOx layer.

Alternately, Step 906 h forms a ZnO film. Step 906 i anneals in anatmosphere such as dry air, a pure inert gas such as N₂ or Ar, or aninert gas such as N₂ or Ar with an oxygen partial pressure. Step 906 j,in response to the annealing, forms a ZnOx layer. With respect to eitherDC sputtering process, Step 906 k, subsequent to forming a ZnOx layer,anneals at a temperature in the range between about 400 and 500° C., fora time duration in the range of about 5 to 60 minutes, in an atmospheresuch as dry air or pure oxygen.

If the MOCVD or ALD deposition methods are used, generally thedepositing of ZnOx includes: supplying a dimethyl zinc (DMZn) precursor;supplying an oxygen partial pressure in the range of about 10 to 90%;creating a deposition pressure in the range between about 10 mTorr and100 mTorr; growing ZnO at a temperature in the range of about 100 to500° C., without preheating the substrate; depositing for a timeduration in the range of about 100 seconds to 1 hour; and, annealing ata temperature in the range of about 400 to 500° C. for a time durationin the range of about 5 to 60 minutes, at an oxygen partial pressure inthe range of about 10 to 30%.

FIG. 10 is flowchart illustrating a method for forming a resistancememory device with an MSM current limiter. The method starts at Step1000. Step 1002 forms a memory resistor bottom electrode (MRBE). Step1004 forms a memory resistor material overlying the memory resistorbottom electrode. Step 1006 forms a memory resistor top electrodeoverlying the memory resistor material. Step 1008 forms an MSM currentlimiter, where ZnOx is the semiconductor, as described above in theexplanation of FIG. 9.

Forming the memory resistor material overlying the memory resistorbottom electrode in Step 1004 includes forming the memory resistor froma material such as Pr_(0.3)Ca_(0.7)MnO₃ (PCMO), colossalmagnetoresistive (CMR) film, transition metal oxides, Mott insulators,high-temperature super conductor (HTSC), or perovskite materials.

FIG. 11 is a flowchart illustrating a method for operating a MSM currentlimiter. The method starts at Step 1100. Step 1102 provides an MSMcurrent limiter with a ZnOx semiconductor layer and a first terminal,where x is in the range between about 1 and about 2, inclusive, see theexplanations above. Step 1104 supplies a first voltage, within a firstvoltage range, to the MSM current limiter terminal. In one aspect, thevoltage range is centered around 0 volts. Step 1106 minimally induces afirst forward bias and a non-linear first reverse bias current flowthrough the MSM current limiter in response to first voltage. That is,the current flow is non-linear. In Step 1106, the device performs itscurrent limiting function, limiting forward and reverse current flow inresponse to relatively low forward and reverse bias voltages,respectively.

Step 1108 supplies a second voltage, greater than the first voltage(outside the first voltage range), to the MSM current limiter terminal.Then, Step 1110 induces a linear forward bias current flow through theMSM current limiter. If the forward bias voltage is increased beyond thefirst voltage range, the device goes into breakdown, and a more linearrelationship develops between bias voltage and current.

Likewise, if Step 1112 supplies a third voltage, less than the firstvoltage (outside the first voltage range), to the MSM current limiterterminal, Step 1114 induces a linear reverse bias current flow throughthe MSM current limiter. That is, when the reverse bias voltage isdecreased (made more negative) beyond the first voltage range, thedevice goes into breakdown, and a more linear relationship developsbetween bias voltage and current.

A MSM current limiter device, made with a ZnOx semiconductor, andcorresponding fabrication process has been provided. Examples of processdetails have been presented to illustrate the invention. Likewise, aresistance memory device has been presented as an example of anapplication. However, the invention is not limited to merely theseexamples. Other variations and embodiments of the invention will occurto those skilled in the art.

1. A method for forming a metal/semiconductor/metal (MSM) currentlimiter, the method comprising: providing a substrate; forming an MSMbottom electrode overlying the substrate; forming a ZnOx semiconductorlayer overlying the MSM bottom electrode, where x is in the rangebetween about 1 and about 2, inclusive; and, forming an MSM topelectrode overlying the semiconductor layer.
 2. The method of claim 1wherein forming the ZnOx semiconductor layer overlying the MSM bottomelectrode includes forming the ZnOx from a process selected from thegroup comprising spin-coating, direct current (DC) sputtering, radiofrequency (RF) sputtering, metalorganic chemical vapor deposition(MOCVD), and atomic layer deposition (ALD).
 3. The method of claim 2wherein the ZnOx semiconductor layer is formed using a spin-coatingprocess; the method further comprising: prior to spin-coating the ZnOx,preparing a ZnOx precursor as follows: preparing a solution of2-methyloxyethanol and ethanolamine; dissolving zinc acetate dehydratein the solution; refluxing the solution at a temperature in the range ofabout 110 to 150° C., for a time duration in the range of about 20 to 60minutes; and, filtering the solution to remove particles larger thanabout 0.2 micrometers.
 4. The method of claim 1 wherein forming the ZnOxsemiconductor layer overlying the MSM bottom electrode includes forminga ZnOx layer having a C-axis orientation.
 5. The method of claim 2wherein spin-coating ZnOx overlying the MSM bottom electrode includes:spin-coating a ZnOx film at a spin-rate in the range of about 1000 to4000 revolutions per minute (RPM); baking the ZnOx film; annealing theZnOx film in an atmosphere selected from the group comprising dry air,an insert gas selected from the group comprising N₂ and Ar with anoxygen partial pressure, and pure oxygen; and, reiterating the processto form a number of ZnOx layers in the range between about 2 and 20,inclusive.
 6. The method of claim 2 wherein depositing ZnOx using the DCsputtering process includes using a target selected from the groupincluding Zn and ZnO.
 7. The method of claim 6 wherein depositing ZnOxusing the DC sputtering process includes DC sputtering in an atmosphereselected from the group comprising with oxygen and without oxygen. 8.The method of claim 7 wherein DC sputtering includes, subsequent toforming a ZnOx layer, annealing at a temperature in the range betweenabout 400 and 500° C., for a time duration in the range of about 5 to 60minutes, in an atmosphere selected from the group including dry air andpure oxygen.
 9. The method of claim 7 wherein DC sputtering includes:using a sputtering power in the range of about 100 to 300 watts;depositing for a time duration in the range of about 1 to 60 minutes;using a deposition temperature in the range of about 20 to 300° C.;sputtering in an atmosphere including an inert gas and about 0 to 30%oxygen; and, using a deposition pressure in the range of about 2 to 10milliTorr.
 10. The method of claim 1 wherein forming the ZnOxsemiconductor layer overlying the MSM bottom electrode comprises forminga ZnOx layer having a thickness in the range of about 10 to 1000nanometers.
 11. The method of claim 1 wherein forming the MSM top andbottom electrodes includes forming electrodes having a thickness in therange of about 30 to 200 nanometers (nm).
 12. The method of claim 2wherein depositing ZnOx using a process selected from the groupincluding MOCVD and ALD includes: supplying a dimethyl zinc (DMZn)precursor; supplying an oxygen partial pressure in the range of about 10to 90%; creating a deposition pressure in the range between about 10mTorr and 100 mTorr; growing ZnO at a temperature in the range of about100 to 500° C., without preheating the substrate; depositing for a timeduration in the range of about 100 seconds to 1 hour; and, annealing ata temperature in the range of about 400 to 500° C. for a time durationin the range of about 5 to 60 minutes, at an oxygen partial pressure inthe range of about 10 to 30%.
 13. A method for forming a resistancememory device with metal/semiconductor/metal (MSM) current limiter, themethod comprising: forming a memory resistor bottom electrode; forming amemory resistor material overlying the memory resistor bottom electrode;forming a memory resistor top electrode overlying the memory resistormaterial; forming an MSM bottom electrode overlying the memory resistortop electrode; forming a ZnOx semiconductor layer overlying the MSMbottom electrode, where x is in the range between about 1 and about 2,inclusive; and, forming an MSM top electrode overlying the semiconductorlayer.
 14. The method of claim 13 wherein forming the memory resistormaterial overlying the memory resistor bottom electrode includes formingthe memory resistor from a material selected from the group comprisingPr_(0.3)Ca_(0.7)MnO₃ (PCMO), colossal magnetoresistive (CMR) film,transition metal oxides, Mott insulators, high-temperature superconductor (HTSC), and perovskite materials.
 15. A resistance memorydevice with a metal/semiconductor/metal (MSM) current limiter, thedevice comprising: a memory resistor bottom electrode; a memory resistormaterial overlying the memory resistor bottom electrode; a memoryresistor top electrode overlying the memory resistor material; an MSMbottom electrode overlying the memory resistor top electrode; a ZnOxsemiconductor layer overlying the MSM bottom electrode, where x is inthe range between about 1 and about 2, inclusive; and, an MSM topelectrode overlying the semiconductor layer.
 16. The device of claim 15wherein the memory resistor material is a material selected from thegroup comprising Pr_(0.3)Ca_(0.7)MnO₃ (PCMO), colossal magnetoresistive(CMR) film, transition metal oxides, Mott insulators, high-temperaturesuper conductor (HTSC), and perovskite materials.
 17. Ametal/semiconductor/metal (MSM) current limiter, the MSM current limitercomprising: a substrate; an MSM bottom electrode overlying thesubstrate; a ZnOx semiconductor layer overlying the MSM bottomelectrode, where x is in the range between about 1 and about 2,inclusive; and, an MSM top electrode overlying the semiconductor layer.18. The MSM current limiter of claim 17 wherein the ZnOx semiconductorlayer has a C-axis orientation.
 19. The MSM current limiter of claim 17wherein the ZnOx semiconductor layer has a thickness in the range ofabout 10 to 1000 nanometers (nm).
 20. The MSM current limiter of claim17 wherein the MSM top and bottom electrodes each have a thickness inthe range of about 30 to 200 nm.
 21. The MSM current limiter of claim 17wherein the MSM top and bottom electrodes are a material selected fromthe group comprising Pt, Ir, Au, Ag, TiN, Ti, Al, ALCu, Pd, Rh, W, Cr,and conductive oxides.
 22. A method for operating ametal/semiconductor/metal (MSM) current limiter, the method comprising:providing an MSM current limiter with a ZnOx semiconductor layer and afirst terminal, where x is in the range between about 1 and about 2,inclusive; supplying a first voltage, within a first voltage range, tothe MSM current limiter terminal; and, in response to first voltage,minimally inducing a non-linear first forward bias and a non-linearfirst reverse bias current flow through the MSM current limiter.
 23. Themethod of claim 22 further comprising supplying a second voltage,greater than the first voltage, to the MSM current limiter terminal;and, inducing a linear forward bias current flow through the MSM currentlimiter.
 24. The method of claim 22 further comprising supplying a thirdvoltage, less than the first voltage, to the MSM current limiterterminal; and, inducing a linear reverse bias current flow through theMSM current limiter.